Magnetically Induced Field Effect in Carbon Nanotube Devices

Carbon Nanotube Field-effect Transistors

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experim...

Carbon Nanotube Field Effect Transistors

The present paper treats the Carbon Nanotube Field Effect Transistors (CNFETs) in terms of new development as a possible future basic element for beyond CMOS technology used in ultra high scale integration ULSI. The CNFET is studied both in physical as well as technological point of views aiming a further understanding of the limitations to high integration density. The different types of carbo...

Carbon nanotube junctions and devices Carbon nanotube junctions and devices

Carbon nanotubes are molecules entirely made of carbon atoms. Owing to their special shape, they are extremely stiff but also very flexible. The electronic properties are determined by the exact symmetry of the nanotube lattice, resulting in either metallic or semiconducting behavior. Due to their small diameter, electronic motion is directed in the length direction of the nanotube, making them...

Electrical-field-induced structural change and charge transfer of lanthanide-salophen complexes assembled on carbon nanotube field effect transistor devices.

The application of a negative gate voltage on a carbon nanotube field effect transistor decorated by a binuclear Tb(III) complex leads to the generation of a negatively charged mononuclear one, presenting an electron density transfer to the nanotube and ambipolar behaviour.

Photoresponse of Carbon Nanotube Field-Effect Transistors